Influence of Bismuth on the Microwave Dielectric Properties of Ceramic Dielectric Resonators
Keywords:
Dielectric Resonators, Bismuth Oxide, Microwave Dielectric Properties, BaM₂Ti₄O₁₂, Quality Factor, Temperature Coefficient of ResonanceAbstract
compact, low-loss communication systems. This paper investigates the effect of bismuth oxide (Bi₂O₃) doping on the microwave dielectric properties of BaM₂Ti₄O₁₂ and BaM₂Ti₅O₁₄ (M = La, Nd, Pr, or Nd). The study analyzes the changes in dielectric constant, quality factor, and τ across varying Bi₂O₃ concentrations (0–5 wt%) and sintering conditions. Results show that Bi₂O₃ addition enhances densification, leading to improved dielectric constant and τ, while excessive doping diminishes Q-factor due to secondary phase formation. This research provides insight into optimizing ceramic compositions for advanced microwave applications.
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